发明授权
- 专利标题: Wrap-around gate field effect transistor
- 专利标题(中): 环绕栅场效应晶体管
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申请号: US10732958申请日: 2003-12-11
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公开(公告)号: US07271444B2公开(公告)日: 2007-09-18
- 发明人: Toshiharu Furukawa , Mark Charles Hakey , David Vaclav Horak , Charles William Koburger, III , Peter H. Mitchell
- 申请人: Toshiharu Furukawa , Mark Charles Hakey , David Vaclav Horak , Charles William Koburger, III , Peter H. Mitchell
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A field effect transistor is formed having wrap-around, vertically-aligned, dual gate electrodes. Starting with an silicon-on-insulator (SOI) structure having a buried silicon island, a vertical reference edge is defined, by creating a cavity within the SOI structure, and used during two etch-back steps that can be reliably performed. The first etch-back removes a portion of an oxide layer for a first distance over which a gate conductor material is then applied. The second etch-back removes a portion of the gate conductor material for a second distance. The difference between the first and second distances defines the gate length of the eventual device. After stripping away the oxide layers, a vertical gate electrode is revealed that surrounds the buried silicon island on all four side surfaces.
公开/授权文献
- US20050127466A1 Wrap-around gate field effect transistor 公开/授权日:2005-06-16