发明授权
US07274584B2 Semiconductor memory device having wordline enable signal line and method of arranging the same
失效
具有字线使能信号线的半导体存储器件及其布置方法
- 专利标题: Semiconductor memory device having wordline enable signal line and method of arranging the same
- 专利标题(中): 具有字线使能信号线的半导体存储器件及其布置方法
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申请号: US11330819申请日: 2006-01-11
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公开(公告)号: US07274584B2公开(公告)日: 2007-09-25
- 发明人: Dae-Hee Jung , Chul-Woo Park , Yun-Sang Lee
- 申请人: Dae-Hee Jung , Chul-Woo Park , Yun-Sang Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR10-2005-0002875 20050112
- 主分类号: G11C5/06
- IPC分类号: G11C5/06
摘要:
Provided are a semiconductor memory device having a wordline enable signal line arrangement scheme, which can reduce VPP power consumption and can increase the speed of driving a sub-wordline, and a method of arranging wordline enable signal lines in the semiconductor memory device. In the semiconductor memory device, a wordline enable driver is arranged in a row decoder region outside a memory array region, and the wordline enable signal lines are formed of an uppermost metal layer among three metal layers constituting the semiconductor memory device. Each of the wordline enable signal lines is connected to a sub-wordline driver, rather than to a pair of sub-wordline drivers. In other words, the wordline enable signal lines vertically and horizontally extend forming an inverse L shape.