发明授权
- 专利标题： Semiconductor device with metal wire layer masking
- 专利标题（中）： 具有金属丝层掩蔽的半导体器件
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申请号： US09208105申请日： 1998-11-25
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公开(公告)号： US07276764B1公开(公告)日： 2007-10-02
- 发明人: Kazuhisa Sakamoto
- 申请人： Kazuhisa Sakamoto
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP9-071056 19970325
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening 25 at above of a crystal defect region 11 is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.
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