-
公开(公告)号：US20120003420A1
公开(公告)日：2012-01-05
申请号：US13175080
申请日：2011-07-01
CPC分类号： C04B35/573 , C04B37/005 , C04B2235/422 , C04B2235/79 , C04B2235/80 , C04B2237/083 , C04B2237/365 , F01N3/2828 , F01N3/2882 , F01N2240/16 , Y10T428/24149
摘要： A honeycomb structure body has a honeycomb base body and a pair of electrodes composed of conductive ceramic layers and intermediate layers. The honeycomb base body made of porous ceramics containing SiC is comprised of a cell formation part and an outer peripheral part. The outer peripheral part covers the cell formation part. Each electrode is comprised of a conductive ceramic layer and an intermediate layer. The conductive ceramic layers containing SiC, Si and C are formed at two opposite positions on the outer peripheral part observed from a diameter direction. The intermediate layers containing SiC, Si and C are formed in the outer peripheral part at the parts which face the conductive ceramic layers. The honeycomb structure body satisfies a relationship of 0.5≦t/T≦1, where “t” indicates the thickness of the intermediate layer and “T” indicates the thickness of the outer peripheral part.
摘要翻译： 蜂窝结构体具有蜂窝状基体和由导电性陶瓷层和中间层构成的一对电极。 由含有SiC的多孔陶瓷制成的蜂窝状基体由电池形成部和外周部构成。 外周部覆盖电池形成部。 每个电极由导电陶瓷层和中间层组成。 包含SiC，Si和C的导电陶瓷层形成在从直径方向观察的外周部分的两个相对位置处。 在面向导电陶瓷层的部分的外周部分中形成含有SiC，Si和C的中间层。 蜂窝结构体满足0.5＆nlE; t / T＆nlE; 1的关系，其中“t”表示中间层的厚度，“T”表示外周部的厚度。
-
公开(公告)号：US20070293970A1
公开(公告)日：2007-12-20
申请号：US11889923
申请日：2007-08-17
申请人： Takashi Aiuchi , Akihito Suzuki , Hirotsugu Kamamoto , Shuichi Yonemura , Takashi Imafu , Kazuhisa Sakamoto
发明人： Takashi Aiuchi , Akihito Suzuki , Hirotsugu Kamamoto , Shuichi Yonemura , Takashi Imafu , Kazuhisa Sakamoto
IPC分类号： G06F17/00
CPC分类号： H01L21/67276
摘要： An object of the present invention is to perform replacement of parts of a substrate processing apparatus more rapidly than that by the prior art. The present invention is a substrate processing apparatus constituted of a plurality of component parts for performing predetermined processing for a substrate, identification marks being attached to the respective component parts, the apparatus including: a storage unit for storing part information on each of the component parts necessary when placing an order for a component part, in correspondence with the identification mark; an input unit for inputting an identification mark of a component part to be ordered; and a display unit for displaying the part information in the storage unit corresponding to the inputted identification mark.
摘要翻译： 本发明的目的是比现有技术更快地更换基板处理装置的部件。 本发明是一种由多个用于对基板进行预定处理的部件构成的基板处理装置，识别标记附着在各个部件上，该装置包括：存储单元，用于存储关于每个部件的部件信息 在与识别标记对应的情况下，对组件部分进行订购时必要; 用于输入要订购的部件的识别标记的输入单元; 以及显示单元，用于在与输入的识别标记相对应的存储单元中显示零件信息。
-
公开(公告)号：US07276764B1
公开(公告)日：2007-10-02
申请号：US09208105
申请日：1998-11-25
申请人： Kazuhisa Sakamoto
发明人： Kazuhisa Sakamoto
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/32 , H01L29/41741 , H01L29/66333 , H01L29/66348 , H01L29/7395
摘要： An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening 25 at above of a crystal defect region 11 is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.
摘要翻译： 本发明的目的是提供一种能够仅将电子束辐射到所需区域而不形成用于限制辐射线的层的半导体器件。 即使当电子束在暴露状态下被辐射到源电极时，由铝制成的源电极22也防止产生bre致辐射。 此外，当电子束辐射到其上时，具有在晶体缺陷区域11的上方的开口25的源电极被用作掩模。 也就是说，由铝制成的源极可以用作布线和用于辐射光线的掩模。
-
公开(公告)号：US06674147B2
公开(公告)日：2004-01-06
申请号：US09873412
申请日：2001-06-05
申请人： Kazuhisa Sakamoto
发明人： Kazuhisa Sakamoto
IPC分类号： H01L27082
CPC分类号： H01L29/7322 , H01L27/0761 , H01L29/0692
摘要： Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+-type region. Further, provided in the base region is a base electrode connecting portion (24) consisting of an n+-type region, and a base electrode (26) is connected to the surface of the base electrode connecting portion, and an emitter electrode (27) and a collector electrode (28) are provided and connected electrically to the emitter region and the collector region (21), respectively. As a result, a semiconductor device is obtained which has the transistor in which the reduction in power consumption with a high withstand voltage can be achieved, and the fast switching speed is possible and the large current is obtained. Further a voltage-drive type bipolar transistor such as a digital transistor is obtained which is small in load capacity while establishing a desired drive voltage.
摘要翻译： 在作为集电极区域的n型半导体层（21）的表面上形成由p型区域构成的基极区域（22），并且在p型区域中形成发射极区域（23），其包括： 的n +型区域。 此外，在基极区域设置有由n +型区域构成的基极连接部（24），并且基极（26）与基极连接部的表面连接，发射极 （27）和集电极（28），分别与发射极区域和集电极区域（21）电连接。 结果，获得了具有可以实现具有高耐受电压的功耗降低的晶体管的半导体器件，并且可以实现快速切换速度并获得大电流。 此外，获得诸如数字晶体管的电压驱动型双极晶体管，其在建立期望的驱动电压的同时承载能力小。
-
公开(公告)号：US06444547B1
公开(公告)日：2002-09-03
申请号：US09218010
申请日：1998-12-22
申请人： Kazuhisa Sakamoto , Koichi Kitaguro
发明人： Kazuhisa Sakamoto , Koichi Kitaguro
IPC分类号： H01L2136
摘要： The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type in the epitaxially grown semiconductor layer to form at least a pn junction, and further providing rapid thermal anneal by rapid heating-up and rapid cooling-down in any step in the manufacturing process. By so processing, there can be obtained a semiconductor device having high speed switching characteristics in stable manner without causing problems in manufacturing process such as diffusion of heavy metal or irradiation of corpuscular ray.
-
公开(公告)号：US5750443A
公开(公告)日：1998-05-12
申请号：US793593
申请日：1997-03-03
申请人： Kazuhisa Sakamoto
发明人： Kazuhisa Sakamoto
IPC分类号： H01L29/73 , H01L21/263 , H01L21/331 , H01L21/336 , H01L29/30 , H01L29/732 , H01L29/74 , H01L29/78 , H01L29/861 , H01L21/324
CPC分类号： H01L29/66295 , H01L21/263 , Y10S148/003 , Y10S148/004 , Y10S148/08 , Y10S148/09 , Y10S148/092
摘要： Disclosed is a method of manufacturing a semiconductor device wherein a corpuscular beam is radiated to a semiconductor substrate to create crystal defects therein. The semiconductor substrate is subjected to a heat treatment, e.g. for 1 second to 60 minutes, wherein rapid heating-up, e.g. raising temperature to 550.degree. to 850.degree. C. within 10 minutes, is done in a process prior to that of carrying out of the radiation with a corpuscular beam. By doing so, there is provided a semiconductor device which is free from degradation in electrical characteristics such as current amplification factor and has an increased switching speed, even where crystal defects are created through the radiation of corpuscular beam such as an electron beam to shorten the carrier lifetime. Thus, the inventive semiconductor device is satisfied by both requirements of switching speed and electrical characteristic.
摘要翻译： PCT No.PCT / JP96 / 01906 371日期1997年3月3日 102（e）1997年3月3日PCT PCT 1996年7月9日PCT公布。 公开号WO97 / 03458 日期1997年1月30日公开是制造半导体器件的方法，其中将红色光束照射到半导体衬底以在其中产生晶体缺陷。 对半导体衬底进行热处理，例如， 1秒至60分钟，其中快速加热，例如， 在10分钟内将温度升至550℃至850℃，在用红细胞束进行辐射之前的过程中进行。 通过这样做，提供了一种半导体器件，其即使在通过诸如电子束的粒子束的辐射产生晶体缺陷的情况下，也不会有诸如电流放大因子等电特性的劣化，并且具有增加的切换速度，以缩短 载体寿命。 因此，本发明的半导体器件通过开关速度和电特性的要求都得到满足。
-
公开(公告)号：US06563194B1
公开(公告)日：2003-05-13
申请号：US09666848
申请日：2000-09-21
申请人： Kazuhisa Sakamoto
发明人： Kazuhisa Sakamoto
IPC分类号： H01L27082
CPC分类号： H01L27/0658 , H01L29/7304
摘要： A semiconductor device having: a base area of the first conduction type formed on a semiconductor substrate; an emitter area of the second conduction type formed in the base area; and a collector area of the second conduction type formed as joined to the base area. In the collector area, an impurity area of the first conduction type is formed as separated from the base area. A surface resistor is connected to a base electrode connected to the base area. The surface resistor is connected, at other position thereof, to the impurity area.
摘要翻译： 一种半导体器件，具有：在半导体衬底上形成的第一导电类型的基极区域; 形成在基部区域中的第二导电类型的发射极区域; 以及形成为接合到基部区域的第二导电类型的集电极区域。 在集电极区域中，形成与基极区域分离的第一导电类型的杂质区域。 表面电阻器连接到连接到基座区域的基极。 表面电阻器的其他位置连接到杂质区域。
-
公开(公告)号：US08060244B2
公开(公告)日：2011-11-15
申请号：US11889923
申请日：2007-08-17
申请人： Takashi Aiuchi , Akihito Suzuki , Hirotsugu Kamamoto , Shuichi Yonemura , Takashi Imafu , Kazuhisa Sakamoto
发明人： Takashi Aiuchi , Akihito Suzuki , Hirotsugu Kamamoto , Shuichi Yonemura , Takashi Imafu , Kazuhisa Sakamoto
IPC分类号： G06F7/00
CPC分类号： H01L21/67276
摘要： An object of the present invention is to perform replacement of parts of a substrate processing apparatus more rapidly than that by the prior art. The present invention is a substrate processing apparatus constituted of a plurality of component parts for performing predetermined processing for a substrate, identification marks being attached to the respective component parts, the apparatus including: a storage unit for storing part information on each of the component parts necessary when placing an order for a component part, in correspondence with the identification mark; an input unit for inputting an identification mark of a component part to be ordered; and a display unit for displaying the part information in the storage unit corresponding to the inputted identification mark.
摘要翻译： 本发明的目的是比现有技术更快地更换基板处理装置的部件。 本发明是一种由多个用于对基板进行预定处理的部件构成的基板处理装置，识别标记附着在各个部件上，该装置包括：存储单元，用于存储关于每个部件的部件信息 在与识别标记对应的情况下，对组件部分进行订购时必要; 用于输入要订购的部件的识别标记的输入单元; 以及显示单元，用于在与输入的识别标记相对应的存储单元中显示零件信息。
-
公开(公告)号：US20060151829A1
公开(公告)日：2006-07-13
申请号：US11371720
申请日：2006-03-09
申请人： Kazuhisa Sakamoto
发明人： Kazuhisa Sakamoto
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/32 , H01L29/41741 , H01L29/66333 , H01L29/66348 , H01L29/7395
摘要： An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening 25 at above of a crystal defect region 11 is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.
摘要翻译： 本发明的目的是提供一种能够仅将电子束辐射到所需区域而不形成用于限制辐射光线的层的半导体器件。 即使当电子束在暴露状态下被辐射到源电极时，由铝制成的源电极22也防止产生bre致辐射。 此外，当电子束辐射到其上时，具有在晶体缺陷区域11的上方的开口25的源电极被用作掩模。 也就是说，由铝制成的源极可以用作布线和用于辐射光线的掩模。
-
公开(公告)号：US08482539B2
公开(公告)日：2013-07-09
申请号：US12987334
申请日：2011-01-10
IPC分类号： G06F3/041
CPC分类号： G06F3/0488 , G06F3/03545 , G06F3/044 , G06F2203/04104
摘要： An electronic pen transmits pen information to a controller corresponding to detection of a touch condition, and thereafter turns ON a connecting switch that disconnects electrical connection between the tip portion and the grip portion of the pen that are provided in a state of being electrically disconnected from each other so as to cause a pen input acceptance state. The controller determines that position detection information is from the electronic pen when the position detection information is received from a position detecting device after the pen information is received from the electronic pen, while the controller determines that position detection information is from a finger when the position detection information is received from the position detecting device without receiving the pen information from the electronic pen.
摘要翻译： 电子笔将触摸条件的笔信息发送到控制器，然后接通一个连接开关，该连接开关断开在与电气断开的状态下设置的笔尖部分和握持部分之间的电连接 以使笔输入接受状态。 当从电子笔接收到笔信息之后，当从位置检测装置接收到位置检测信息时，控制器确定位置检测信息来自电子笔，同时当位置检测信息由手指确定位置检测信息时， 从位置检测装置接收到来自电子笔的笔信息的检测信息。
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.014 秒)
