- 专利标题： Block contact architectures for nanoscale channel transistors
-
申请号： US11173866申请日： 2005-06-30
-
公开(公告)号： US07279375B2公开(公告)日： 2007-10-09
- 发明人: Marko Radosavljevic , Amlan Majumdar , Brian S. Doyle , Jack Kavalieros , Mark L. Doczy , Justin K. Brask , Uday Shah , Suman Datta , Robert S. Chau
- 申请人： Marko Radosavljevic , Amlan Majumdar , Brian S. Doyle , Jack Kavalieros , Mark L. Doczy , Justin K. Brask , Uday Shah , Suman Datta , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch.
公开/授权文献
信息查询
IPC分类:
