发明授权
- 专利标题： Floating base bipolar ESD devices
- 专利标题（中）： 浮动基极双极ESD器件
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申请号： US11015402申请日： 2004-12-17
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公开(公告)号： US07279753B1公开(公告)日： 2007-10-09
- 发明人: Hugh Sung-Ki O , Chih-Ching Shih , Yowjuang Bill Liu , Cheng-Hsiung Huang
- 申请人： Hugh Sung-Ki O , Chih-Ching Shih , Yowjuang Bill Liu , Cheng-Hsiung Huang
- 申请人地址： US CA San Jose
- 专利权人： Altera Corporation
- 当前专利权人： Altera Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L29/76
摘要：
The present invention includes a bipolar ESD device for protecting an integrated circuit from ESD damage. The bipolar ESD device includes a collector connected to a terminal of the integrated circuit, a floating base, and a grounded emitter. When an ESD pulse hits the terminal of the integrated circuit, the PN junction between the emitter and the base becomes forward biased. The forward biasing of the emitter-base PN junction in turn causes carriers to be injected into the collector-base junction, triggering the bipolar ESD device to turn on to discharge the ESD pulse. The trigger voltage of the bipolar ESD device is a fraction of a breakdown voltage of the collector-base PN junction and can be modified by adjusting a base length of the bipolar ESD device, a junction depth of the collector, or a dopant concentration in the base.
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