发明授权
US07282426B2 Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
有权
形成具有不对称介电区域的半导体器件及其结构的方法
- 专利标题： Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
- 专利标题（中）： 形成具有不对称介电区域的半导体器件及其结构的方法
-
申请号： US11092289申请日： 2005-03-29
-
公开(公告)号： US07282426B2公开(公告)日： 2007-10-16
- 发明人: Leo Mathew , Venkat R. Kolagunta , David C. Sing
- 申请人： Leo Mathew , Venkat R. Kolagunta , David C. Sing
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Kim-Marie Vo
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.