发明授权
US07285815B2 EEPROM device having selecting transistors and method of fabricating the same
有权
具有选择晶体管的EEPROM器件及其制造方法
- 专利标题: EEPROM device having selecting transistors and method of fabricating the same
- 专利标题(中): 具有选择晶体管的EEPROM器件及其制造方法
-
申请号: US11336751申请日: 2006-01-20
-
公开(公告)号: US07285815B2公开(公告)日: 2007-10-23
- 发明人: Kwang-Shik Shin , Han-Soo Kim , Sung-Hoi Hur
- 申请人: Kwang-Shik Shin , Han-Soo Kim , Sung-Hoi Hur
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR2003-47972 20030714
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
An EEPROM includes a device isolation layer for defining a plurality of active regions, a pair of control gates extending across the active regions and a pair of selection gates patterns that extend across the active regions and are interposed between the control gate patterns. A floating gate pattern is formed on intersection regions where the control gate patterns extend across the active regions. A lower gate pattern is formed on intersection regions where the selection gate patterns extend across the active regions. An inter-gate dielectric pattern is disposed between the control gate pattern and the floating gate pattern and a dummy dielectric pattern is disposed between the selection gate pattern and the lower gate pattern. The dummy dielectric pattern is substantially parallel to the selection gate pattern, and self-aligned with one sidewall of the selection gate pattern to overlap a predetermine width of the selection gate pattern.