发明授权
- 专利标题： Copper conducting wire structure and fabricating method thereof
- 专利标题（中）： 铜导线结构及其制造方法
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申请号： US11219718申请日： 2005-09-07
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公开(公告)号： US07289183B2公开(公告)日： 2007-10-30
- 发明人: Feng-Yuan Gan , Han-Tu Lin , Kuo-Yuan Tu
- 申请人： Feng-Yuan Gan , Han-Tu Lin , Kuo-Yuan Tu
- 申请人地址： TW Hsin-Chu
- 专利权人： AU Optronics Corp.
- 当前专利权人： AU Optronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Bacon & Thomas PLLC
- 优先权： TW94117136A 20050525
- 主分类号： G02F1/1343
- IPC分类号： G02F1/1343 ; B32B3/00
摘要：
A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.
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