摘要:
A thin-film transistor (TFT) includes a gate electrode, a gate dielectric layer, a semiconductor layer, source/drain electrodes, a passivation layer and a protection layer. The gate electrode is disposed on a substrate. The gate dielectric layer covers the gate electrode and the substrate. The semiconductor layer is disposed on the gate dielectric layer and above the gate electrode. The semiconductor layer has a channel region disposed above the gate electrode and source/drain regions disposed at both sides of the channel region. The source/drain electrodes are disposed on the source/drain regions of the semiconductor layer and each has a barrier layer disposed on the source/drain regions of the semiconductor layer and a conductive layer disposed on the barrier layer. The passivation layer is disposed over the surface of the source/drain electrodes. The protection layer is disposed over the substrate, the passivation layer, and the channel region of the semiconductor layer.
摘要:
A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer.
摘要:
A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.
摘要:
A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.
摘要:
A display panel structure having a circuit element disposed thereon and method of manufacture are provided. The display panel includes a substrate and the circuit element disposed on the substrate. The circuit element has a first interface layer and a first conductive layer. Both the first interface layer and the first conductive layer have cooper materials. The material which makes the first interface layer includes a reactant or a compound of the material which makes the first conductive layer. The method for manufacturing includes the following steps: forming a first interface layer on the substrate; forming a first conductive layer on the first interface layer; and etching the first conductive and interface layers to form a pattern. The existence of the first interface reduces the penetration of the first conductive layer on the substrate and improves the adhesive force between the first conductive layer and the substrate.
摘要:
The invention discloses a switching element for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A high-k dielectric layer is formed on the gate. The high-k dielectric layer comprises HfO2, HfNO, HfSiO, HfSiNO, or HfAlO. A semiconductor layer is formed on the high-k dielectric layer. A source and a drain are formed on a portion of the semiconductor layer.
摘要:
The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.
摘要翻译:本发明公开了一种用于显示装置的像素电极的开关装置及其制造方法。 栅极形成在基板上。 在栅极上形成栅极绝缘层。 在栅极和衬底之间形成缓冲层,和/或形成在栅极和栅极绝缘层之间。 缓冲层包括TaSi x N,Ta Si x N y N y,TiSi x x Ti,Ti Si x x, WS 1 x 2,W 1,X 2,X 3,...,N 2, > N SUB>。 在栅极绝缘层上形成半导体层。 源极和漏极形成在半导体层的一部分上。 门被缓冲层覆盖。
摘要:
A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer.
摘要:
A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate-insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer. Accordingly, the reliable TFT is provided through providing at last one CuSix layer for enhancing the adhesion of copper and silicon and avoiding the diffusion, and the yield is improved as well.
摘要翻译:公开了薄膜晶体管(TFT)及其制造方法,薄膜晶体管包括:基板,栅电极,第一CuSi x层,栅极绝缘层,半导体 层,第二CuSi x层,以及源电极和漏电极。 栅电极设置在基板上,其中栅电极包括铜(Cu)的材料。 第一CuSi x x层设置在栅电极和衬底之间。 栅极绝缘层设置在栅电极上。 半导体层设置在栅极绝缘层上。 第二CuSi x x层设置在源电极和半导体层之间,并且设置在漏电极和半导体层之间,其中源电极和漏电极包括铜(Cu)的材料, 。 源电极和漏电极设置在第二CuSi x层上。 因此,通过提供最后一个CuSi x层来提供可靠的TFT,以增强铜和硅的粘附并避免扩散,并且产率也提高。
摘要:
The invention discloses a switching device for a pixel electrode of display device. The switching device comprises a gate formed on a substrate; a gate-insulating layer formed on the gate; a first buffer layer formed between the substrate and the gate and/or between the gate and the gate-insulating layer, wherein the first buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy; a semiconductor layer formed on a portion of the gate-insulating layer; and a source and a drain formed on a portion of the semiconductor layer.
摘要翻译:本发明公开了一种用于显示装置的像素电极的开关装置。 开关装置包括形成在基板上的栅极; 形成在栅极上的栅极绝缘层; 形成在所述基板和所述栅极之间和/或所述栅极与所述栅极绝缘层之间的第一缓冲层,其中所述第一缓冲层包括TaSi x Si,TaSi x N Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si 或者是N x N y,或者是X x N y。 形成在所述栅极绝缘层的一部分上的半导体层; 以及形成在半导体层的一部分上的源极和漏极。