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US07291559B2 Etching method, gate etching method, and method of manufacturing semiconductor devices 失效
蚀刻方法，栅极蚀刻方法以及半导体器件的制造方法

Etching method, gate etching method, and method of manufacturing semiconductor devices
摘要：
In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carried out. The layer and the resist pattern of the dummy sample are etched in an etching device so that the layer and the resist pattern of the dummy device are simultaneously slimmed. Finally, the layer and the resist pattern of the actual device are etched in the etching device after the etching of the dummy sample so that the layer and the resist pattern of the actual device are simultaneously slimmed.
摘要（中）：

在制造半导体器件的方法中，制备虚拟样品和实际器件。 虚拟样品和实际器件具有基本上相同的层和形成在该层上的相同抗蚀剂图案。 然后，进行虚拟放电。 在蚀刻装置中蚀刻伪样品的层和抗蚀剂图案，使得虚设装置的层和抗蚀剂图案同时变薄。 最后，在对虚拟样品进行蚀刻之后，在蚀刻装置中蚀刻实际器件的层和抗蚀剂图案，使得实际器件的层和抗蚀剂图案同时变薄。

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