发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11360286申请日： 2006-02-22
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公开(公告)号： US07291883B2公开(公告)日： 2007-11-06
- 发明人: Ryo Kanda , Shuichi Kikuchi , Seiji Otake
- 申请人： Ryo Kanda , Shuichi Kikuchi , Seiji Otake
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Fish & Richardson P.C.
- 优先权： JPP2005-049007 20050224
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
In a conventional semiconductor device, there is a problem that an N-type diffusion region provided for protecting an element from an overvoltage is narrow and a breakdown current is concentrated so that a PN junction region for protection is broken. In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across a wider region on an upper surface of the N-type buried diffusion layer so that a PN junction region for overvoltage protection is formed. A P-type diffusion layer is formed so as to be connected to the P-type diffusion layer. A breakdown voltage of the PN junction region is lower than a breakdown voltage between a source and a drain. With this structure, the concentration of the breakdown current is prevented so that the semiconductor device can be protected from the overvoltage.
公开/授权文献
- US20060186477A1 Semiconductor device 公开/授权日：2006-08-24
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