发明授权
- 专利标题: Method of manufacturing a silicide layer
- 专利标题(中): 硅化物层的制造方法
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申请号: US11088984申请日: 2005-03-24
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公开(公告)号: US07294577B2公开(公告)日: 2007-11-13
- 发明人: Junji Oh , Yuka Hayami , Ryou Nakamura
- 申请人: Junji Oh , Yuka Hayami , Ryou Nakamura
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Staas & Halsey LLP
- 优先权: JP2004-089052 20040325
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.
公开/授权文献
- US20050215003A1 Method of manufacturing a silicide layer 公开/授权日:2005-09-29