发明授权
- 专利标题： Low-K dielectric structure and method
- 专利标题（中）： 低K电介质结构及方法
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申请号： US10301957申请日： 2002-11-21
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公开(公告)号： US07294934B2公开(公告)日： 2007-11-13
- 发明人: Grant M. Kloster , Xiarong Morrow , Jihperng Leu
- 申请人： Grant M. Kloster , Xiarong Morrow , Jihperng Leu
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 David L. Guglielmi
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.
公开/授权文献
- US20040102031A1 Low-K dielectric structure and method 公开/授权日：2004-05-27
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