Invention Grant
US07294998B2 Timing generation circuit and semiconductor test device having the timing generation circuit 失效
具有定时发生电路的定时发生电路和半导体测试装置

  • Patent Title: Timing generation circuit and semiconductor test device having the timing generation circuit
  • Patent Title (中): 具有定时发生电路的定时发生电路和半导体测试装置
  • Application No.: US10538595
    Application Date: 2003-12-12
  • Publication No.: US07294998B2
    Publication Date: 2007-11-13
  • Inventor: Noriaki Chiba
  • Applicant: Noriaki Chiba
  • Applicant Address: JP Tokyo
  • Assignee: Advantest Corp.
  • Current Assignee: Advantest Corp.
  • Current Assignee Address: JP Tokyo
  • Agency: Muramatsu & Associates
  • Priority: JP2002-362392 20021213
  • International Application: PCT/JP03/15920 WO 20031212
  • International Announcement: WO2004/055532 WO 20040701
  • Main IPC: G01R31/28
  • IPC: G01R31/28
Timing generation circuit and semiconductor test device having the timing generation circuit
Abstract:
A timing generation circuit can increase a maximum delay amount without changing the configuration of a timing memory. The timing generation circuit includes: a timing memory (TMM) 10 containing predetermined timing data; a plurality of down counters 20 for loading the timing data from the TMM and outputting a pulse signal at the timing indicated by the timing data; an address selection circuit 40 for specifying one or two TMM addresses by switching and outputting corresponding one or plural timing data; a load data switching circuit 50 for loading the plural timing data to the plural down counters cascaded and outputting one timing pulse signal; and a timing data selection circuit 60 for selecting one of the pulse signals. The plural timing data are generated by dividing the timing memory into a plurality of memory regions either in a column or row direction.
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