Novel dual damascene methods characterized by short cycle time and low expense. In one embodiment, the method includes providing a dielectric layer on a substrate; etching a via in the dielectric layer; filling the via with a conductive metal such as copper; providing a second dielectric layer over the via; etching a trench in the second dielectric layer; and filling the trench with a conductive metal such as copper. In another embodiment, the method includes providing a dielectric layer on a substrate; etching a partial via in the dielectric layer; etching a partial trench in the dielectric layer over the partial via; completing the via and the trench in a single etching step; and filling the via and the trench with a conductive metal such as copper to complete the via and metal line, respectively.