Invention Grant
- Patent Title: Embedded capacitor
- Patent Title (中): 嵌入式电容器
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Application No.: US11229756Application Date: 2005-09-19
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Publication No.: US07301751B2Publication Date: 2007-11-27
- Inventor: Jea-Hyuck Lee , Young-Min Lee , Shi-Yun Cho , Shin-Hee Cho , Kyung-Wan Park
- Applicant: Jea-Hyuck Lee , Young-Min Lee , Shi-Yun Cho , Shin-Hee Cho , Kyung-Wan Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Cha & Reiter, LLC
- Priority: KR10-2004-0091761 20041111
- Main IPC: H01G4/06
- IPC: H01G4/06 ; H01G4/005 ; H01G4/228

Abstract:
An embedded capacitor comprises a first substrate on which a plurality of electrically insulated electrode patterns and a ground pattern are formed, a second substrate separated from the first substrate, a plurality of dielectric layers stacked between the first and second substrates, a plurality of metal layers inserted between the dielectric layers and connected to the electrode patterns of the first substrate, and a plurality of ground layers inserted between the dielectric layers alternately with the metal layers.
Public/Granted literature
- US20060098386A1 Embedded capacitor and method for manufacturing the same Public/Granted day:2006-05-11
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