发明授权
US07306957B2 Fabrication method of semiconductor integrated circuit device 有权
半导体集成电路器件的制造方法

Fabrication method of semiconductor integrated circuit device
摘要:
A memory test is carried out on semiconductor integrated circuit devices including a semiconductor memory at low cost with efficiency. In a test burn-in system, twenty-four test boards are processed in sequence with time differences, and the test boards are circulated one by one. In this case, the memory test is conducted with the sequence of single board processing: the test is started with a test board in which semiconductor integrated circuit devices have been embedded, and semiconductor integrated circuit devices are discharged, beginning with a test board that has undergone the test.
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