发明授权
- 专利标题： Ultra-uniform silicide system in integrated circuit technology
- 专利标题（中）： 集成电路技术中超均匀的硅化物系统
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申请号： US11252493申请日： 2005-10-17
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公开(公告)号： US07307322B2公开(公告)日： 2007-12-11
- 发明人: Robert J. Chiu , Jeffrey P. Patton , Paul R. Besser , Minh Van Ngo
- 申请人： Robert J. Chiu , Jeffrey P. Patton , Paul R. Besser , Minh Van Ngo
- 申请人地址： US CA Sunnyvale
- 专利权人： Adavnced Micro Devices, Inc.
- 当前专利权人： Adavnced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Mikio Ishimaru
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.
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