发明授权
- 专利标题: System for forming composite polymer dielectric film
- 专利标题(中): 用于形成复合聚合物电介质膜的系统
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申请号: US10816179申请日: 2004-03-31
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公开(公告)号: US07309395B2公开(公告)日: 2007-12-18
- 发明人: Chung J. Lee , Atul Kumar , Chieh Chen , Yuri Pikovsky
- 申请人: Chung J. Lee , Atul Kumar , Chieh Chen , Yuri Pikovsky
- 申请人地址: US CA Fremont
- 专利权人: Dielectric Systems, Inc.
- 当前专利权人: Dielectric Systems, Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Alleman Hall McCoy Russell & Tuttle LLP
- 主分类号: C23C16/52
- IPC分类号: C23C16/52 ; C23C16/04 ; C23C16/22 ; C23C16/452 ; C23C16/48 ; C23F1/00 ; H01L21/306
摘要:
A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing layer. The system includes a process module having a processing chamber and a monomer delivery system configured to admit a gas-phase monomer into the processing chamber for deposition of the low dielectric constant polymer layer, a post-treatment module for annealing the composite polymer dielectric film, and a silane delivery system configured to admit a vapor flow containing a silane precursor into at least one of the process module and the post-treatment module for the formation of the first silane-containing layer and the silane-containing layer.
公开/授权文献
- US20050223989A1 System for forming composite polymer dielectric film 公开/授权日:2005-10-13
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