发明授权
- 专利标题： Method for fabricating a nonvolatile memory cell
- 专利标题（中）： 非易失性存储单元的制造方法
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申请号： US11735440申请日： 2007-04-14
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公开(公告)号： US07309632B1公开(公告)日： 2007-12-18
- 发明人: Wei-Bo Lu , Dah-Chuan Chen
- 申请人： Wei-Bo Lu , Dah-Chuan Chen
- 申请人地址： TW Science Park, Hsin-Chu
- 专利权人： Powerchip Semiconductor Corp.
- 当前专利权人： Powerchip Semiconductor Corp.
- 当前专利权人地址： TW Science Park, Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247
摘要：
A method of fabricating a nonvolatile memory cell includes providing a substrate with a trench, with a sidewall where a tunnel oxide layer and a floating gate are successively formed, forming a control gate in the trench, performing a high density plasma deposition process to form an HDP oxide layer on the top surface of control gate.