发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US10681615申请日： 2003-10-08
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公开(公告)号： US07311796B2公开(公告)日： 2007-12-25
- 发明人: Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
- 申请人： Masashi Goto , Yukihiko Nakata , Kazufumi Azuma , Tetsuya Okamoto
- 申请人地址： JP
- 专利权人： Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
- 当前专利权人： Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
- 当前专利权人地址： JP
- 代理机构： Graybeal Jackson Haley LLP
- 优先权： JP2002-295590 20021009; JP2003-290428 20030808
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23C16/00 ; C23C14/34
摘要：
A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.
公开/授权文献
- US20040071613A1 Plasma processing apparatus 公开/授权日：2004-04-15
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