Invention Grant
- Patent Title: Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device
- Patent Title (中): 蚀刻组合物，其制备方法，蚀刻氧化膜的方法以及半导体器件的制造方法
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Application No.: US10962508Application Date: 2004-10-13
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Publication No.: US07311857B2Publication Date: 2007-12-25
- Inventor: Yong-Kyun Ko , Sang-Mun Chon , In-Hoi Doh , Pil-Kwon Jun , Sang-Mi Lee , Kwang-shin Lim , Myoung-Ok Han
- Applicant: Yong-Kyun Ko , Sang-Mun Chon , In-Hoi Doh , Pil-Kwon Jun , Sang-Mi Lee , Kwang-shin Lim , Myoung-Ok Han
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2003-0072692 20031017; KR10-2004-0000235 20040105
- Main IPC: C09K13/04
- IPC: C09K13/04
Abstract:
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.
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