公开(公告)号：US07951653B1

公开(公告)日：2011-05-31

申请号：US12948331

申请日：2010-11-17

Applicant: Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

Inventor： Jung-Dae Park ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

IPC: H01L21/00

CPC classification number: H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Abstract translation: 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

公开(公告)号：US20100009885A1

公开(公告)日：2010-01-14

申请号：US12564077

申请日：2009-09-22

Applicant: Jung-Dae PARK ,  Pil-Kwon JUN ,  Myoung-Ok HAN ,  Se-Yeon KIM ,  Kwang-Shin LIM ,  Tae-Hyo CHOI ,  Seung-Ki CHAE ,  Yang-Koo LEE

Inventor： Jung-Dae PARK ,  Pil-Kwon JUN ,  Myoung-Ok HAN ,  Se-Yeon KIM ,  Kwang-Shin LIM ,  Tae-Hyo CHOI ,  Seung-Ki CHAE ,  Yang-Koo LEE

IPC: G03F7/42

CPC classification number: C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract translation: 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US07608540B2

公开(公告)日：2009-10-27

申请号：US11406243

申请日：2006-04-19

Applicant: Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

Inventor： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC: H01L29/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract translation: 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US20080051313A1

公开(公告)日：2008-02-28

申请号：US11840165

申请日：2007-08-16

Applicant: Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

Inventor： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

IPC: C11D3/20

CPC classification number: C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/32 ,  C11D7/5022 ,  C11D11/0041

Abstract: In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Abstract translation: 在用于除去可能保留在用于制造半导体器件的装置上的聚合物污染物的组合物中，以及使用该组合物除去聚合物污染物的方法，该组合物包括约5至10重量％的氟化物盐，约5至10重量％ 至15重量％的酸或其盐，和约75至90重量％的乙二醇水溶液。 组合物可以在相对短的时间内有效地从设备中除去聚合物污染物，并且抑制对装置的部件的损坏。

公开(公告)号：US20060287207A1

公开(公告)日：2006-12-21

申请号：US11406243

申请日：2006-04-19

Applicant: Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

Inventor： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC: C11D7/32

CPC classification number: C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract translation: 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R 1是羟基或羟烷基，R 2是氢原子或羟烷基。

公开(公告)号：US10234435B2

公开(公告)日：2019-03-19

申请号：US15251553

申请日：2016-08-30

Applicant: Sunghan Jung ,  Ami Choi ,  JungDae Park ,  Dong-Soo Lee ,  Ji-Won Eom ,  Kyung-Soo Chae ,  Kwang-Shin Lim

Inventor： Sunghan Jung ,  Ami Choi ,  JungDae Park ,  Dong-Soo Lee ,  Ji-Won Eom ,  Kyung-Soo Chae ,  Kwang-Shin Lim

IPC: G01N30/64 ,  G01N30/96 ,  B01J20/281

Abstract: A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

公开(公告)号：US20110130000A1

公开(公告)日：2011-06-02

申请号：US12948331

申请日：2010-11-17

Applicant: Jung-Dae PARK ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

Inventor： Jung-Dae PARK ,  Da-Hee Lee ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Kwang-Shin Lim

IPC: H01L21/60

CPC classification number: H01L21/32134 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Abstract translation: 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线，以及将用于蚀刻铜的组合物施加到基底上，以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量％的有机酸，约0.01至1.0重量％的氧化剂和质子溶剂。

公开(公告)号：US07687448B2

公开(公告)日：2010-03-30

申请号：US12564077

申请日：2009-09-22

Applicant: Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

Inventor： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC: C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract translation: 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US20070144559A1

公开(公告)日：2007-06-28

申请号：US11611524

申请日：2006-12-15

Applicant: Kwang-Shin Lim ,  Sung-Jae Han ,  Yong-Hoon Lee ,  Hyung-Seok Choi ,  Ju-Ah Ryu ,  Yong-Joo Choi

Inventor： Kwang-Shin Lim ,  Sung-Jae Han ,  Yong-Hoon Lee ,  Hyung-Seok Choi ,  Ju-Ah Ryu ,  Yong-Joo Choi

IPC: B08B3/00 ,  B08B3/04

CPC classification number: B08B3/04 ,  H01L21/67051 ,  H01L21/67751 ,  H01L21/68707

Abstract: A unit for preventing a substrate from drying includes a transfer arm for transferring a substrate from a first bath containing a first cleaning solution to a second bath containing a second cleaning solution, a spraying part connected to the transfer arm, wherein the spraying part sprays a drying prevention solution from an upper portion of the substrate to a lower portion of the substrate, and a drainage container connected to the transfer arm, wherein the drainage container receives the drying prevention solution.

Abstract translation: 用于防止基材干燥的单元包括用于将基材从含有第一清洗溶液的第一浴转移到含有第二清洗溶液的第二浴的转移臂，连接到转移臂的喷射部分，其中喷雾部分喷雾 从所述基板的上部到所述基板的下部的防干燥溶液和与所述输送臂连接的排水容器，其中所述排水容器接收所述干燥防止溶液。

公开(公告)号：US20070090325A1

公开(公告)日：2007-04-26

申请号：US11580937

申请日：2006-10-16

Applicant: Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

Inventor： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC: C09K13/00 ,  B44C1/22 ,  H01L21/461 ,  H01L21/302 ,  C25F3/00

CPC classification number: H01L27/10855 ,  H01L21/31111 ,  H01L21/76816

Abstract: An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Abstract translation: 在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。 蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。 蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。