摘要:
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.
摘要:
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.
摘要:
In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.
摘要:
In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.
摘要:
An optical filter includes a base film and at least two conductive layers stacked on the base film, a first conductive layer of the two conductive layers having a first thickness and a first refractive index, and a second conductive layer of the two conductive layers having a second thickness and a second refractive index, the first and second refractive indices and the first and second thicknesses being configured to generate a destructive interference of external light reflected from the first and second conductive layers.
摘要:
A display apparatus for switching between 2-dimensional (2D) and 3-dimensional (3D) image displaying modes is disclosed. In one embodiment, the display apparatus includes: i) a display unit configured to emit light, ii) a first optical sheet configured to input the emitted light and output a first refracted light and iii) a second optical sheet configured to input the first refracted light and selectively output one of a second refracted light and a third refracted light, wherein the first optical sheet is located between the display unit and second optical sheet. The display apparatus further includes an actuator configured to move at least one of the first optical sheet and the second optical sheet between a contacting state and a separating state, wherein the first and second optical sheets contact each other at the contacting state so that the second optical sheet outputs the second refracted light, and wherein the first and second optical sheets are spaced apart from each other at the separating state so that the second optical sheet outputs the third refracted light.
摘要:
In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized water is prepared. The etchant is provided onto a nitride layer that is formed on a bevel, a front side or a backside of a substrate to remove the nitride layer. The substrate is rinsed using deionized water, and then the substrate is dried. The etchant rapidly removes the nitride layer at a relatively low temperature to avoid damage to the substrate.
摘要:
A display panel easily implements reflection color of a display. The display panel includes a panel which has a plate shape to implement an image, and an optical filter which is attached to the panel. The optical filter includes a color compensating layer which implements transmittance color by controlling transmittance light passing from an interior to an exterior of the panel, and a reflection layer which implements reflection color by controlling reflection light which is incident from the exterior to the panel, and which is reflected.
摘要:
An optical filter and a plasma display device including the same are provided. The optical filter includes a support layer, and a plurality of stripe-shaped structures arranged at predetermined intervals on one surface of the support layer and formed using a material having a different refractive index than a refractive index of the support layer. In the optical filter, incident light is reflected at an interface between the support layer and the structure due to a difference of the respective refractive indices. Since the direction of entry of external light is the same as the reflected exit direction of the external light, visibility degradation caused by interference from the external light is minimized or reduced. Since the structure is formed using a material having a high transmittance, luminance loss of light generated by the display is also minimized.
摘要:
An optical filter and a plasma display device having the same is provided. The optical filter includes a support layer. A photochromic pattern has pattern elements spaced apart on a surface of the support layer and has a light transmission characteristic wherein light transmission is changeable according to the intensity of external light.