Invention Grant
- Patent Title: Low temperature phase change thermal interface material dam
- Patent Title (中): 低温相变热界面材料坝
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Application No.: US11305527Application Date: 2005-12-16
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Publication No.: US07312527B2Publication Date: 2007-12-25
- Inventor: Sandeep B. Sane , Nitin Deshpande , Chia-Pin Chiu
- Applicant: Sandeep B. Sane , Nitin Deshpande , Chia-Pin Chiu
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A method, apparatus and system with a semiconductor package including a thermal interface material dam enclosing a volume of thermal interface material.
Public/Granted literature
- US20070138621A1 Low temperature phase change thermal interface material dam Public/Granted day:2007-06-21
Information query
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