发明授权
US07314789B2 Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
有权
用于产生MOSFET通道迁移率修正的局部机械栅极应力的结构和方法
- 专利标题： Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification
- 专利标题（中）： 用于产生MOSFET通道迁移率修正的局部机械栅极应力的结构和方法
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申请号： US11618751申请日： 2006-12-30
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公开(公告)号： US07314789B2公开(公告)日： 2008-01-01
- 发明人: Cyril Cabral, Jr. , Bruce B. Doris , Thomas S. Kanarsky , Xiao H. Liu , Huilong Zhu
- 申请人： Cyril Cabral, Jr. , Bruce B. Doris , Thomas S. Kanarsky , Xiao H. Liu , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Yuanmin Cai
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/84 ; H01L21/04
摘要：
A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.
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