发明授权
US07316063B2 Methods of fabricating substrates including at least one conductive via
有权
制造包括至少一个导电通孔的基板的方法
- 专利标题： Methods of fabricating substrates including at least one conductive via
- 专利标题（中）： 制造包括至少一个导电通孔的基板的方法
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申请号： US10755905申请日： 2004-01-12
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公开(公告)号： US07316063B2公开(公告)日： 2008-01-08
- 发明人: Warren M. Farnworth , Steven M. McDonald , Nishant Sinha , William M. Hiatt
- 申请人： Warren M. Farnworth , Steven M. McDonald , Nishant Sinha , William M. Hiatt
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H05K3/02
- IPC分类号： H05K3/02 ; H05K3/10
摘要：
A method of fabricating a substrate is disclosed. Apertures are formed in a substrate blank. A conductive layer is formed on opposing surfaces of the substrate, as well as inside the apertures. Conductive elements are defined on one or both opposing surfaces by masking and etching. Additional layers of conductive materials may be used to provide a barrier layer and a noble metal cap for the conductive elements. The methods of the present invention may be used to fabricate an interposer for use in packaging semiconductor devices or a test substrate. Substrate precursor structures are also disclosed.
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