发明授权
- 专利标题： Method of forming sidewall spacers
- 专利标题（中）： 形成侧墙的方法
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申请号： US11177216申请日： 2005-07-08
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公开(公告)号： US07316975B2公开(公告)日： 2008-01-08
- 发明人: Markus Lenski , Wolfgang Buchholtz , Andy Wei , Michael Raab
- 申请人： Markus Lenski , Wolfgang Buchholtz , Andy Wei , Michael Raab
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102004057809 20041130
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A substrate comprising a first transistor element and a second transistor element is provided. A layer of a material is deposited over the first transistor element and the second transistor element. A portion of the layer of material is modified, which may be done, e.g., by irradiating the portion with ions or performing an isotropic etching process to reduce its thickness. An etching process adapted to remove the modified portion of the layer of material more quickly than an unmodified portion of the layer located over the second transistor element is performed.
公开/授权文献
- US20060115988A1 Method of forming sidewall spacers 公开/授权日：2006-06-01
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