公开(公告)号：US20130203125A1

公开(公告)日：2013-08-08

申请号：US13818928

申请日：2011-08-23

Applicant: Binzhang Shen ,  James Apgar ,  Oleg Bougri ,  R. Michael Raab

Inventor： Binzhang Shen ,  James Apgar ,  Oleg Bougri ,  R. Michael Raab

IPC: C12N15/82 ,  C12N9/24 ,  C12P19/14

CPC classification number: C12N15/8243 ,  C12N9/248 ,  C12N9/2482 ,  C12N15/8216 ,  C12N15/8246 ,  C12P19/14 ,  C12Y302/01008

Abstract: In planta consolidated bioprocessing has the advantages of decreasing biomass pretreatment costs, utilizing excess plant protein production capacity for enzyme production, and decreasing mass transfer resistance of enzyme diffusion to its substrate. However, in planta expression of cell wall degrading (CWD) enzymes often leads to detrimental plant phenotypes that impact crop yield. To provide in planta CWD enzyme activity without any adverse phenotype, a thermostable xylanase, XynB (EC 3.2.1.8), was engineered with a thermoregulated intein, Tth-HB27 DnaE-1 (Tth intein), that controls its hydrolytic activity through conditional intein splicing. Maize plants expressing the heat inducible Tth intein-modified XynB developed normally, yet possessed enhanced post harvest glucose production from dried corn stover. Expression of CWD enzymes as dormant, intein-modified proteins that can be activated by heat treatment after harvest provides the basis for developing a novel cellulosic processing trait in plants.

Abstract translation: 在植物中，综合生物处理具有降低生物量预处理成本，利用植物蛋白生产过剩的酶生产能力，降低酶扩散对其底物的传质阻力的优点。 然而，在植物表达的细胞壁降解（CWD）酶通常导致有害的植物表型影响作物产量。 为了在没有任何不良表型的情况下提供植物CWD酶活性，用热调节的内含肽Tth-HB27DnaE-1（第T个内含肽）设计热稳定的木聚糖酶XynB（EC 3.2.1.8），其通过条件内含肽来控制其水解活性 拼接。 表达热诱导性Tth内蛋白修饰的XynB的玉米植物正常发育，但是从干燥的玉米秸秆中获得增强的后收获葡萄糖产量。 CWD酶作为休眠后的内含肽修饰蛋白质的表达，可以在收获后通过热处理活化，为开发植物中新型纤维素加工性状提供依据。

公开(公告)号：US08420387B2

公开(公告)日：2013-04-16

申请号：US12590444

申请日：2009-11-06

Applicant: Binzhang Shen ,  Gabor Lazar ,  Humberto de la Vega ,  James Apgar ,  Philip Lessard ,  R. Michael Raab

Inventor： Binzhang Shen ,  Gabor Lazar ,  Humberto de la Vega ,  James Apgar ,  Philip Lessard ,  R. Michael Raab

IPC: C12N15/09 ,  C12N9/00 ,  C12N15/00 ,  C12N15/52 ,  C12N15/63

CPC classification number: C12N9/2482 ,  C12N9/2437 ,  C12N9/248 ,  C12N15/8216 ,  C12N15/8241 ,  C12N15/8246 ,  C12Y302/01004 ,  C12Y302/01008

Abstract: A method of predicting an intein insertion site in a protein that will lead to a switching phenotype is provided. The method includes identifying a plurality of C/T/S sites within the protein; selecting from the plurality of C/T/S/ sites those that are ranked 0.75 or higher by a support vector machine, within ten angstroms of the active site of the protein, and at or near a loop-β-sheet junction or a loop-α-helix junction. A method of controlling protein activity and hosts including proteins with controlled activity are also provided. Also, intein modified proteins and plants containing intein modified proteins are provided.

Abstract translation: 提供了一种预测蛋白质中的内含肽插入位点将导致切换表型的方法。 该方法包括鉴定蛋白内的多个C / T / S位点; 从多个C / T / S /位点中选择由支持向量机排列为0.75或更高的那些，在蛋白质的活性位点的10埃内，以及在环 - 环α螺旋结。 还提供了控制蛋白质活性的方法和包含具有受控活性的蛋白质的宿主。 此外，提供了内含肽修饰的蛋白质和含有内含肽修饰的蛋白质的植物。

公开(公告)号：US20130071884A1

公开(公告)日：2013-03-21

申请号：US13508280

申请日：2010-11-05

Applicant: R. Michael Raab ,  Vlad Samoylov ,  Oleg Bougri ,  Nathan Ekborg

Inventor： R. Michael Raab ,  Vlad Samoylov ,  Oleg Bougri ,  Nathan Ekborg

IPC: A01H5/00 ,  C12P19/14 ,  C12N15/82

CPC classification number: C12P19/14 ,  C12N9/2437 ,  C12N9/248 ,  C12N15/8216 ,  C12N15/8245 ,  C12N15/8246 ,  C12N15/8257 ,  C12N15/8261 ,  C12N15/8287 ,  C12P19/02 ,  C12Y302/01 ,  C12Y302/01004 ,  C12Y302/01008 ,  Y02A40/146

Abstract: Vectors for expression of proteins in plants are described. The proteins may be enzymes and the enzymes can be but are not limited to cell wall degrading enzymes. A number of plants designed to express specific cell wall degrading enzymes are provided. The plants may have industrial and/or agricultural applications. Methods and materials for making the expression vectors and for making the plants are provided. Processes for which the plants could be used in industrial and agricultural applications are also provided.

Abstract translation: 描述了用于在植物中表达蛋白质的载体。 蛋白质可以是酶，酶可以但不限于细胞壁降解酶。 提供了许多旨在表达特定细胞壁降解酶的植物。 这些植物可能具有工业和/或农业应用。 提供用于制备表达载体和制备植物的方法和材料。 还提供了可在工业和农​​业应用中使用植物的方法。

公开(公告)号：US20080115243A1

公开(公告)日：2008-05-15

申请号：US11596821

申请日：2005-05-19

Applicant: R. Michael Raab ,  Kyle L. Jensen ,  Karl Ruping

Inventor： R. Michael Raab ,  Kyle L. Jensen ,  Karl Ruping

IPC: C12N15/87 ,  A01H1/00 ,  C12P21/04 ,  C12N5/00

CPC classification number: C12N15/8257 ,  C07K14/505 ,  C07K14/61 ,  C12N15/8216

Abstract: Transgenic plants that express CIVPS or intein modified therapeutic proteins, compositions of matter comprising them, therapeutic proteins made from the transgenic plants, methods to construct the transgenic plants containing CIVPS or intein modified therapeutic genes, methods to express CIVPS or intein modified therapeutic proteins in plants, and methods of using the transgenic plants.

Abstract translation: 表达CIVPS或内含肽修饰的治疗蛋白质的转基因植物，包含它们的物质组合物，由转基因植物制备的治疗性蛋白质，构建含有CIVPS或内含肽修饰的治疗基因的转基因植物的方法，在植物中表达CIVPS或内含肽修饰的治疗蛋白质的方法 ，以及使用转基因植物的方法。

公开(公告)号：US07316975B2

公开(公告)日：2008-01-08

申请号：US11177216

申请日：2005-07-08

Applicant: Markus Lenski ,  Wolfgang Buchholtz ,  Andy Wei ,  Michael Raab

Inventor： Markus Lenski ,  Wolfgang Buchholtz ,  Andy Wei ,  Michael Raab

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/823468

Abstract: A substrate comprising a first transistor element and a second transistor element is provided. A layer of a material is deposited over the first transistor element and the second transistor element. A portion of the layer of material is modified, which may be done, e.g., by irradiating the portion with ions or performing an isotropic etching process to reduce its thickness. An etching process adapted to remove the modified portion of the layer of material more quickly than an unmodified portion of the layer located over the second transistor element is performed.

Abstract translation: 提供了包括第一晶体管元件和第二晶体管元件的衬底。 一层材料沉积在第一晶体管元件和第二晶体管元件上。 材料层的一部分被修饰，其可以例如通过用离子照射部分或执行各向同性蚀刻工艺来实现，以减小其厚度。 执行适于比位于第二晶体管元件上方的层的未修改部分更快地去除材料层的修饰部分的蚀刻工艺。

公开(公告)号：US20060131699A1

公开(公告)日：2006-06-22

申请号：US11185391

申请日：2005-07-20

Applicant: Michael Raab ,  Andy Wei ,  Manfred Horstmann

Inventor： Michael Raab ,  Andy Wei ,  Manfred Horstmann

IPC: H01L29/04

CPC classification number: H01L29/7842 ,  H01L21/76243 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1207

Abstract: By using an implantation technique for forming a buried insulation layer, an SOI-type configuration may be achieved for hybrid orientation substrates, thereby significantly enhancing the further fabrication processes in forming circuit elements on differently oriented semiconductor regions. Consequently, process complexity for methodology and production steps is significantly reduced compared to fabrication processes based on conventional hybrid orientation substrates.

Abstract translation: 通过使用用于形成掩埋绝缘层的注入技术，可以实现用于混合取向基板的SOI型结构，从而显着增强在不同取向半导体区域上形成电路元件的进一步的制造工艺。 因此，与基于常规混合取向衬底的制造工艺相比，方法学和生产步骤的工艺复杂性显着降低。

公开(公告)号：US20060042726A1

公开(公告)日：2006-03-02

申请号：US10933014

申请日：2004-09-02

Applicant: Andrea Keys ,  Jeffrey Melzer ,  Michael Raab

Inventor： Andrea Keys ,  Jeffrey Melzer ,  Michael Raab

IPC: C23C22/00

CPC classification number: C23C22/361 ,  C09D119/02 ,  C09D121/02 ,  C23C22/83

Abstract: Chromate free treatments and compositions for applying a conversion or passivation coating to metal surfaces. Preferred compositions comprise a film forming latex polymer, fluoacid, phosphoric acid, and a polyoxyethylene/oxypropylene block copolymer. The requisite metal surfaces are contacted by the compositions and dried. Rinsing is optional.

公开(公告)号：US06593197B2

公开(公告)日：2003-07-15

申请号：US09811733

申请日：2001-03-19

Applicant: Karsten Wieczorek ,  Manfred Horstmann ,  Rolf Stephan ,  Michael Raab

Inventor： Karsten Wieczorek ,  Manfred Horstmann ,  Rolf Stephan ,  Michael Raab

IPC: H01L21336

CPC classification number: H01L29/6659

Abstract: This invention provides methods of forming a field-effect transistor in an integrated circuit using self-aligning technology on the basis of a sidewall spacer masking procedure, both for defining the device isolation features and the source and drain regions. The active region is defined after patterning the gate electrode by means of deposition and etch processes instead of overlay alignment technique. Thus, the present invention enables an increase of the integration density of semiconductor devices, a minimization of the parasitic capacitances in field-effect transistor devices, and a quicker manufacturing process.

公开(公告)号：US06268257B1

公开(公告)日：2001-07-31

申请号：US09557714

申请日：2000-04-25

Applicant: Karsten Wieczorek ,  Michael Raab ,  Rolf Stephan

Inventor： Karsten Wieczorek ,  Michael Raab ,  Rolf Stephan

IPC: H01L21336

CPC classification number: H01L29/66507 ,  H01L21/28247 ,  H01L29/6659

Abstract: A method is disclosed in which a low-resistance portion of the gate electrode of a transistor is formed independently of the formation of low-resistance portions in the drain and source regions. Accordingly, the device features a thick low-resistance portion in the gate electrode, for example, a thick gate silicide for supporting low gate delays by minimizing the gate resistance, and a thin low-resistance portion in the drain and source in order to meet the requirements for shallow junction integration. Moreover, a transistor is disclosed having a low-resistance gate electrode portion, the composition of which is different from the low-resistance portion of the drain and source.

Abstract translation: 公开了一种方法，其中晶体管的栅电极的低电阻部分形成为独立于在漏极和源极区域中形成低电阻部分。 因此，该器件在栅电极中具有厚的低电阻部分，例如，通过最小化栅极电阻来支持低栅极延迟的厚栅极硅化物，以及漏极和源极中的薄的低电阻部分，以便满足 浅结合整合的要求。 此外，公开了一种具有低电阻栅极电极部分的晶体管，其组成不同于漏极和源极的低电阻部分。

公开(公告)号：US5027657A

公开(公告)日：1991-07-02

申请号：US445235

申请日：1989-12-01

Applicant: Deitrich Juckenack ,  Matthias Schildwachter ,  Klaus-Peter Buege ,  Michael Raab ,  Gerhard Blumenstein

Inventor： Deitrich Juckenack ,  Matthias Schildwachter ,  Klaus-Peter Buege ,  Michael Raab ,  Gerhard Blumenstein

IPC: G01P1/00 ,  G01P15/08 ,  G01P15/105

CPC classification number: G01P1/003 ,  G01P15/08 ,  G01P15/105 ,  Y10S73/03

Abstract: An acceleration sensor essentially consists of a cantilevered laterally bending beam arranged in a housing. Because of its mass inertia the bending beam is deflectable relative to the sensor housing in the plane of the acceleration to be measured. The bending beam has the design of a thin resilient strip which is wide relative to its thickness and is made of amorphous metal. The bending beam may have a one-layer or a multi-layer structure. In case of a multi-layer structure, the friction between the individual strips, causes the vibration to be damped. A small air gap between the walls of a closed housing and the bending beam additionally brings about an air damping of the bending beam's vibrations.

Abstract translation: 加速度传感器基本上由布置在壳体中的悬臂式横向弯曲梁组成。 由于其质量惯性，弯曲梁相对于传感器外壳在待测加速度平面内是可偏转的。 弯曲梁具有相对于其厚度宽的薄弹性带的设计，并且由非晶金属制成。 弯曲梁可以具有一层或多层结构。 在多层结构的情况下，单个条带之间的摩擦导致振动被阻尼。 封闭壳体的壁与弯曲梁之间的小空气间隙又引起弯曲梁振动的空气阻尼。