发明授权
US07319295B2 High-frequency power supply structure and plasma CVD device using the same
失效
高频电源结构和等离子体CVD装置使用相同
- 专利标题: High-frequency power supply structure and plasma CVD device using the same
- 专利标题(中): 高频电源结构和等离子体CVD装置使用相同
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申请号: US10506544申请日: 2003-03-13
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公开(公告)号: US07319295B2公开(公告)日: 2008-01-15
- 发明人: Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
- 申请人: Hiroshi Mashima , Keisuke Kawamura , Akemi Takano , Yoshiaki Takeuchi , Tetsuro Shigemizu , Tatsufumi Aoi
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Heavy Industries, Ltd.
- 当前专利权人: Mitsubishi Heavy Industries, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-070181 20020314
- 国际申请: PCT/JP03/02986 WO 20030313
- 国际公布: WO03/077293 WO 20030918
- 主分类号: H01J7/24
- IPC分类号: H01J7/24
摘要:
A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.