公开(公告)号：US07319295B2

公开(公告)日：2008-01-15

申请号：US10506544

申请日：2003-03-13

申请人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

发明人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

IPC分类号： H01J7/24

CPC分类号： H01J37/32577 ,  H01J37/32082

摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

摘要翻译： 提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为 位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

公开(公告)号：US20050127844A1

公开(公告)日：2005-06-16

申请号：US10506544

申请日：2003-03-13

申请人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

发明人： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01J7/24

CPC分类号： H01J37/32577 ,  H01J37/32082

摘要： A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

摘要翻译： 提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为 位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

公开(公告)号：US07205034B2

公开(公告)日：2007-04-17

申请号：US10494528

申请日：2002-10-29

申请人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

发明人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

IPC分类号： H05H1/24

CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082

摘要： A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

摘要翻译： 一种等离子体产生装置，其通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。 第一和第二电源部安装在安装在等离子体化学气相沉积装置中的放电电极的两端，并且被提供有交替的周期：第一周期，其中第一和第二电源部分接收高频 相同的频率，以及接收不同的高频波的第二周期。 以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

公开(公告)号：US20050255255A1

公开(公告)日：2005-11-17

申请号：US10494528

申请日：2002-10-29

申请人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

发明人： Keisuke Kawamura ,  Akemi Takano ,  Hiroshi Mashima ,  Hiromu Takatuka ,  Yasuhiro Yamauti ,  Yoshiaki Takeuchi ,  Eishiro Sasakawa

IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082

摘要： This invention relates a plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. The present invention installs a first and a second power supply section on both ends of the discharge electrode installed in plasma chemical vapor deposition apparatus, which are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

摘要翻译： 本发明涉及一种等离子体生成装置，其用于通过安装在等离子体化学气相沉积装置中的非常高频（VHF）在大面积上均匀地产生等离子体。 本发明在安装在等离子体化学气相沉积装置中的放电电极的两端安装第一和第二电源部分，该等离子体化学气相沉积装置被提供有交替的周期：第一和第二电源部分接收高频波 相同的频率，以及接收不同的高频波的第二周期。 以这种方式，等离子体产生的状态可以在每个周期中变化，并且当随时间平均时，使得在大的表面积上等离子体产生是均匀的。

公开(公告)号：US06307146B1

公开(公告)日：2001-10-23

申请号：US09404409

申请日：1999-09-23

申请人： Yoshiaki Takeuchi ,  Masayoshi Murata ,  Akemi Takano ,  Tatsuyuki Nishimiya ,  Syouji Morita ,  Tatsufumi Aoi ,  Tatsuji Horioka

发明人： Yoshiaki Takeuchi ,  Masayoshi Murata ,  Akemi Takano ,  Tatsuyuki Nishimiya ,  Syouji Morita ,  Tatsufumi Aoi ,  Tatsuji Horioka

IPC分类号： H01L310376

CPC分类号： H01L31/028 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.

摘要翻译： 非晶硅太阳能电池包括基板，形成在该基板上的透明电极，形成在该透明电极上的发电膜和形成在该发光膜上的背面电极。 发电膜通过依次层叠p型/ i型/ n型氢化非晶硅层而形成。 i型氢化非晶硅层的缺陷密度小于1015缺陷/ cc。

公开(公告)号：US08088641B2

公开(公告)日：2012-01-03

申请号：US12993252

申请日：2008-10-30

申请人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

发明人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  C23C8/00

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。 该制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基底材料基底上。

公开(公告)号：US20110092012A1

公开(公告)日：2011-04-21

申请号：US12993252

申请日：2008-10-30

申请人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

发明人： Hiroshi Mashima ,  Koichi Asakusa ,  Akemi Takano ,  Nobuki Yamashita ,  Yoshiaki Takeuchi

IPC分类号： H01L31/18

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现期望的结晶比。 制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中所述n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基底材料基底上。

公开(公告)号：US06363881B2

公开(公告)日：2002-04-02

申请号：US09232600

申请日：1999-01-19

申请人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

发明人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

IPC分类号： C23C16509

CPC分类号： H01J37/32082 ,  H01J37/32541

摘要： Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

摘要翻译： 公开了一种等离子体化学气相沉积设备，用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜，微晶薄膜或多晶薄膜，其包括反应 容器，用于将反应气体供给到反应容器中的装置，用于将反应气体的废气排出反应容器的排出装置，设置在反应容器内的用于排放产生的梯形电极， 用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz，用于加热和支撑目标衬底的加热器，加热器与反应容器内平行于梯形电极放电产生 以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。

公开(公告)号：US08529704B2

公开(公告)日：2013-09-10

申请号：US12864624

申请日：2008-06-27

申请人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

发明人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

IPC分类号： B08B5/04

CPC分类号： C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

摘要翻译： 用于清洁真空处理装置的操作方法包括当预定数量的成膜过程完成时，将清洁气体进料到真空处理设备的成膜室中。 基于薄膜沉积相关的操作时间（薄膜沉积时间和薄膜沉积准备时间）和清洁相关的操作时间（清洁程序时间，清洁程序准备时间）来计算预定数量的成膜沉积工艺 ，以及预沉积膜沉积时间）。

公开(公告)号：US20100310785A1

公开(公告)日：2010-12-09

申请号：US12864624

申请日：2008-06-27

申请人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

发明人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

IPC分类号： C23C16/00 ,  B05C11/00 ,  B05D3/00

CPC分类号： C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).

摘要翻译： 本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。 在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁 程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例 相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。