发明授权
US07319364B2 Amplifier circuit having improved linearity and frequency band using multiple gated transistor
失效
使用多门控晶体管的放大器电路具有改善的线性度和频带
- 专利标题: Amplifier circuit having improved linearity and frequency band using multiple gated transistor
- 专利标题(中): 使用多门控晶体管的放大器电路具有改善的线性度和频带
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申请号: US11281580申请日: 2005-11-18
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公开(公告)号: US07319364B2公开(公告)日: 2008-01-15
- 发明人: Tae Wook Kim , Bonkee Kim , Kwyro Lee
- 申请人: Tae Wook Kim , Bonkee Kim , Kwyro Lee
- 申请人地址: KR Seongnam-si, Gyeonggi-do
- 专利权人: Integrant Technologies Inc.
- 当前专利权人: Integrant Technologies Inc.
- 当前专利权人地址: KR Seongnam-si, Gyeonggi-do
- 代理机构: Foley & Lardner LLP
- 优先权: KR10-2004-0108492 20041220
- 主分类号: H03F3/68
- IPC分类号: H03F3/68 ; H03F1/22
摘要:
Disclosed herein is an amplifier circuit having improved linearity and frequency band using a MGTR. The amplifier circuit comprises an amplification unit including a main transistor and an auxiliary transistor, an attenuation unit including inductors respectively connected to the source of the main transistor and the source of the auxiliary transistor, a capacitor connected at one end thereof to the sources of the main transistor and auxiliary transistor and connected at the other end thereof to the gates of the main transistor and auxiliary transistor, and an output unit connected to the drains of the main transistor and auxiliary transistor.
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