Invention Grant
US07320942B2 Method for removal of metallic residue after plasma etching of a metal layer
失效
在等离子体蚀刻金属层之后去除金属残留物的方法
- Patent Title: Method for removal of metallic residue after plasma etching of a metal layer
- Patent Title (中): 在等离子体蚀刻金属层之后去除金属残留物的方法
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Application No.: US10285967Application Date: 2002-11-01
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Publication No.: US07320942B2Publication Date: 2008-01-22
- Inventor: Xiaoyi Chen , Chentsau Ying , Padmapani C. Nallan , Ajay Kumar , Ralph C. Kerns , Ying Rui , Chun Yan , Guowen Ding , Wai-Fan Yau
- Applicant: Xiaoyi Chen , Chentsau Ying , Padmapani C. Nallan , Ajay Kumar , Ralph C. Kerns , Ying Rui , Chun Yan , Guowen Ding , Wai-Fan Yau
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser IP Law Group
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/308
Abstract:
A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
Public/Granted literature
- US20030219912A1 Method for removal of metallic residue after plasma etching of a metal layer Public/Granted day:2003-11-27
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