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公开(公告)号：US08557615B2
公开(公告)日：2013-10-15
申请号：US13310724
申请日：2011-12-03
Applicant: Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
Inventor： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC: H01L21/00
CPC classification number: H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
Abstract: A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
Abstract translation: 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后，在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率，这表明耐久性优异。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。
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公开(公告)号：US20130143354A1
公开(公告)日：2013-06-06
申请号：US13310724
申请日：2011-12-03
Applicant: Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
Inventor： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
CPC classification number: H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
Abstract: A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
Abstract translation: 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后，在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化，这表明极好的二次性。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。
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公开(公告)号：US20130136919A1
公开(公告)日：2013-05-30
申请号：US13307301
申请日：2011-11-30
Applicant: Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
Inventor： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
CPC classification number: C23C14/086 , C23C14/024 , C23C14/5806 , Y10T428/12549 , Y10T428/265
Abstract: A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
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4.发明授权Electrochromic device with improved transparent conductor and method for forming the same 失效具有改进的透明导体的电致变色器件及其形成方法公开(公告)号：US08665511B2
公开(公告)日：2014-03-04
申请号：US13338074
申请日：2011-12-27
Applicant: Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
Inventor： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
IPC: G02F1/153
CPC classification number: G02F1/155
Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
Abstract translation: 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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5.发明申请METHODS AND APPARATUSES FOR LOW RESISTIVITY Ag THIN FILM USING COLLIMATED SPUTTERING 审中-公开低电阻Ag薄膜的使用方法和装置公开(公告)号：US20130319847A1
公开(公告)日：2013-12-05
申请号：US13489079
申请日：2012-06-05
Applicant: Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
Inventor： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
CPC classification number: C03C17/36 , C03C17/3644 , C03C17/366 , C03C17/3681 , C23C14/086 , C23C14/185 , C23C14/562
Abstract: A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.
Abstract translation: 一种用于制造低辐射面板的方法，包括在基底或种子膜的高度光滑的层上形成高度光滑的银层。 高度平滑的层可以通过准直的溅射来实现，当到达衬底时降低溅射颗粒的角分布。
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Patent Agency Ranking
6.发明申请Electrochromic Device With Improved Transparent Conductor And Method For Forming The Same 失效具有改进的透明导体的电致变色器件及其形成方法公开(公告)号：US20130163064A1
公开(公告)日：2013-06-27
申请号：US13338074
申请日：2011-12-27
Applicant: Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
Inventor： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
CPC classification number: G02F1/155
Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
Abstract translation: 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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7.发明申请METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS 审中-公开用于TCO过程的具有高通量和ELLIPSOMETRY诊断方法的方法公开(公告)号：US20130136851A1
公开(公告)日：2013-05-30
申请号：US13307341
申请日：2011-11-30
Applicant: Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhin-Wen Sun
Inventor： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhin-Wen Sun
CPC classification number: C23C14/08 , C23C14/0042 , C23C14/3464 , C23C14/545 , C23C14/5806 , C23C14/5853
Abstract: A method for producing antimony doped tin oxide (ATO) films is discussed wherein the films are deposited by reactive sputtering using a non-poisoned mode and then annealed in an air ambient to fully oxidize the films and improve the resistivity and transmission characteristics, and the non-poisoned mode method could improve the throughput. A method using spectroscopic ellipsometry and an independent measurement of an additional optical or physical property is disclosed which results in a significantly improved prediction of the various optical and physical properties of the film, such that the method made the spectroscopic ellipsometry valuable for monitoring and controlling the process in real time, and valuable for determining the carrier density, mobility and their gradients within the film.
Abstract translation: 讨论了制造锑掺杂氧化锡（ATO）膜的方法，其中通过使用非中毒模式的反应溅射沉积膜，然后在空气环境中退火以完全氧化膜并提高电阻率和传输特性， 非中毒模式方法可以提高吞吐量。 公开了一种使用光谱椭偏仪和附加光学或物理性质的独立测量的方法，其导致对膜的各种光学和物理性质的显着改进的预测，使得该方法使得光谱椭圆偏振值对于监测和控制 过程，并且对于确定电影中的载流子密度，迁移率及其梯度是有价值的。
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公开(公告)号：US08784934B2
公开(公告)日：2014-07-22
申请号：US13305550
申请日：2011-11-28
Applicant: Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
Inventor： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
IPC: B05D5/06
CPC classification number: C03C17/366 , C03C17/2453 , C03C17/36 , C03C17/3618 , C03C17/3642 , C23C14/08 , C23C28/32 , C23C28/345 , H01B3/10
Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.
Abstract translation: 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。
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公开(公告)号：US20130136932A1
公开(公告)日：2013-05-30
申请号：US13305550
申请日：2011-11-28
Applicant: Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
Inventor： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
CPC classification number: C03C17/366 , C03C17/2453 , C03C17/36 , C03C17/3618 , C03C17/3642 , C23C14/08 , C23C28/32 , C23C28/345 , H01B3/10
Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.
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公开(公告)号：US08435419B2
公开(公告)日：2013-05-07
申请号：US13014813
申请日：2011-01-27
Applicant: Guowen Ding , Herrick Ng , Teh-Tien Sue , Benjamin Schwarz , Zhuang Li
Inventor： Guowen Ding , Herrick Ng , Teh-Tien Sue , Benjamin Schwarz , Zhuang Li
IPC: C23F1/00
CPC classification number: H01L21/31116 , H01L21/02057 , H01L21/31122 , H01L21/32136 , H01L21/32137
Abstract: Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O2) and a carbohydrate. In some embodiments, a two step method with an additional second process gas comprising chlorine (Cl2) or a sulfur (S) containing gas, may provide an efficient way to remove patterned mask residue.
Abstract translation: 本文提供了处理具有金属层的基板的方法。 在一些实施例中，一种处理包括具有设置在金属层上方的图案化掩模层的金属层的衬底的方法，所述方法可以包括通过图案化掩模层蚀刻金属层; 以及使用由包含氧（O 2）和碳水化合物的第一工艺气体形成的第一等离子体去除图案化掩模层。 在一些实施方案中，具有包含氯（Cl 2）或含硫（S））气体的另外的第二工艺气体的两步法可以提供去除图案化掩模残余物的有效方式。
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