TCO materials for solar applications
    1.
    发明授权
    TCO materials for solar applications 失效
    TCO材料用于太阳能应用

    公开(公告)号:US08557615B2

    公开(公告)日:2013-10-15

    申请号:US13310724

    申请日:2011-12-03

    Abstract: A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

    Abstract translation: 用于形成用于TFPV太阳能装置的透明导电氧化物(TCO)膜的方法包括形成掺杂有约5体积%至约40体积%的锑(ATO)的氧化锡膜。 有利地,Sb浓度通常在约15体积%至约20体积%的范围内,更有利地,Sb浓度为约19体积%。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后,在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率,这表明耐久性优异。 Al掺杂的氧化锌(AZO)的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

    TCO MATERIALS FOR SOLAR APPLICATIONS
    2.
    发明申请
    TCO MATERIALS FOR SOLAR APPLICATIONS 失效
    TCO材料用于太阳能应用

    公开(公告)号:US20130143354A1

    公开(公告)日:2013-06-06

    申请号:US13310724

    申请日:2011-12-03

    Abstract: A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

    Abstract translation: 用于形成用于TFPV太阳能装置的透明导电氧化物(TCO)膜的方法包括形成掺杂有约5体积%至约40体积%的锑(ATO)的氧化锡膜。 有利地,Sb浓度通常在约15体积%至约20体积%的范围内,更有利地,Sb浓度为约19体积%。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后,在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化,这表明极好的二次性。 Al掺杂的氧化锌(AZO)的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

    METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS
    7.
    发明申请
    METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS 审中-公开
    用于TCO过程的具有高通量和ELLIPSOMETRY诊断方法的方法

    公开(公告)号:US20130136851A1

    公开(公告)日:2013-05-30

    申请号:US13307341

    申请日:2011-11-30

    Abstract: A method for producing antimony doped tin oxide (ATO) films is discussed wherein the films are deposited by reactive sputtering using a non-poisoned mode and then annealed in an air ambient to fully oxidize the films and improve the resistivity and transmission characteristics, and the non-poisoned mode method could improve the throughput. A method using spectroscopic ellipsometry and an independent measurement of an additional optical or physical property is disclosed which results in a significantly improved prediction of the various optical and physical properties of the film, such that the method made the spectroscopic ellipsometry valuable for monitoring and controlling the process in real time, and valuable for determining the carrier density, mobility and their gradients within the film.

    Abstract translation: 讨论了制造锑掺杂氧化锡(ATO)膜的方法,其中通过使用非中毒模式的反应溅射沉积膜,然后在空气环境中退火以完全氧化膜并提高电阻率和传输特性, 非中毒模式方法可以提高吞吐量。 公开了一种使用光谱椭偏仪和附加光学或物理性质的独立测量的方法,其导致对膜的各种光学和物理性质的显着改进的预测,使得该方法使得光谱椭圆偏振值对于监测和控制 过程,并且对于确定电影中的载流子密度,迁移率及其梯度是有价值的。

    Heat stable SnAl and SnMg based dielectrics
    8.
    发明授权
    Heat stable SnAl and SnMg based dielectrics 有权
    耐热SnAl和SnMg基电介质

    公开(公告)号:US08784934B2

    公开(公告)日:2014-07-22

    申请号:US13305550

    申请日:2011-11-28

    Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

    Abstract translation: 包含锡,氧和铝或镁中的一种优选高于15重量%的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如,当在高于500℃的温度下进行热处理时,本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率,低发射率涂层面板,提供热稳定性,使得涂层的光学和结构性能如可见透射率,IR反射率,微观形态特性,颜色外观和 涂层和加热处理产品的雾度特性。

    Methods of processing substrates having metal materials
    10.
    发明授权
    Methods of processing substrates having metal materials 有权
    处理具有金属材料的基板的方法

    公开(公告)号:US08435419B2

    公开(公告)日:2013-05-07

    申请号:US13014813

    申请日:2011-01-27

    Abstract: Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O2) and a carbohydrate. In some embodiments, a two step method with an additional second process gas comprising chlorine (Cl2) or a sulfur (S) containing gas, may provide an efficient way to remove patterned mask residue.

    Abstract translation: 本文提供了处理具有金属层的基板的方法。 在一些实施例中,一种处理包括具有设置在金属层上方的图案化掩模层的金属层的衬底的方法,所述方法可以包括通过图案化掩模层蚀刻金属层; 以及使用由包含氧(O 2)和碳水化合物的第一工艺气体形成的第一等离子体去除图案化掩模层。 在一些实施方案中,具有包含氯(Cl 2)或含硫(S))气体的另外的第二工艺气体的两步法可以提供去除图案化掩模残余物的有效方式。

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