Invention Grant
US07323376B2 Method for fabricating a semiconductor device including a group III nitride semiconductor
有权
用于制造包括III族氮化物半导体的半导体器件的方法
- Patent Title: Method for fabricating a semiconductor device including a group III nitride semiconductor
- Patent Title (中): 用于制造包括III族氮化物半导体的半导体器件的方法
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Application No.: US10736605Application Date: 2003-12-17
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Publication No.: US07323376B2Publication Date: 2008-01-29
- Inventor: Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
- Applicant: Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-013395 20030122
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.
Public/Granted literature
- US20040227153A1 Semiconductor device and method for fabricating the same Public/Granted day:2004-11-18
Information query
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