Method of reducing film stress on overlay mark

Invention Grant

US07323393B2 Method of reducing film stress on overlay mark 有权

Title translation: 降低覆膜标记膜应力的方法

Please log in to see more content

Patent Title: Method of reducing film stress on overlay mark
Patent Title (中): 降低覆膜标记膜应力的方法
Application No.: US11715527

Application Date: 2007-03-07
Publication No.: US07323393B2

Publication Date: 2008-01-29
Inventor: Yu-Lin Yen , Ching-Yu Chang
Applicant: Yu-Lin Yen , Ching-Yu Chang
Applicant Address: TW Hsinchu
Assignee: Macronix International Co., Ltd.
Current Assignee: Macronix International Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Stout, Uxa, Buyan & Mullins, LLP
Main IPC: H01L21/76
IPC: H01L21/76

Method of reducing film stress on overlay mark

Abstract:

An integrated circuit capable of operating despite a profile shift is disclosed. Overlay marks on the integrated circuit are surrounded by a trench that tends to relieve the effect of a profile shift caused by stress applied to the integrated circuit. The position of the overlay marks tends, therefore, not to be affected by the stress.

Abstract(Chinese):

公开了尽管轮廓偏移的能够运行的集成电路。集成电路上的覆盖标记被沟槽包围，该沟槽倾向于减轻由施加到集成电路的应力引起的轮廓移位的影响。因此，覆盖标记的位置倾向于不受应力的影响。

Public/Granted literature

US20070166946A1 Method of reducing film stress on overlay mark Public/Granted day:2007-07-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作