发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US11221904申请日: 2005-09-09
-
公开(公告)号: US07323773B2公开(公告)日: 2008-01-29
- 发明人: Yoshinari Hayashi , Toshikazu Ishikawa , Takayuki Hoshino
- 申请人: Yoshinari Hayashi , Toshikazu Ishikawa , Takayuki Hoshino
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2004-273024 20040921
- 主分类号: H01L21/58
- IPC分类号: H01L21/58
摘要:
There is disclosed a semiconductor device having first and second semiconductor chips. The first semiconductor chip has a memory circuit. The second semiconductor chip has a circuit controlling the memory circuit. The contour size of the semiconductor device is reduced down to a smaller size required by a client without impairing the testability of the first semiconductor chip having the memory circuit. The circuit controlling the memory circuit consists of an MPU. The memory circuit consists of an SDRAM. The two semiconductor chips are stacked on top of each other over the top surface of an interconnect substrate. The chips are sealed in a molding resin, thus forming an SiP (System-in-Package). First terminals electrically connected with the second chip are arranged as external terminals of the SiP on the outer periphery of the bottom surface of the interconnect substrate. Plural second electrodes electrically connected with interconnects, which electrically connect the two chips, are mounted as terminals for testing of the SDRAM. The second electrodes are located more inwardly than the innermost row of the first external electrodes on the bottom surface of the interconnect substrate.
公开/授权文献
- US20060060959A1 Semiconductor device 公开/授权日:2006-03-23
信息查询
IPC分类: