发明授权
- 专利标题： Double-sided container capacitors using a sacrificial layer
- 专利标题（中）： 双面容器电容器采用牺牲层
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申请号： US11021639申请日： 2004-12-22
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公开(公告)号： US07329576B2公开(公告)日： 2008-02-12
- 发明人: Gurtej S. Sandhu , Kevin R. Shea , Chris W. Hill , Kevin J. Torek
- 申请人： Gurtej S. Sandhu , Kevin R. Shea , Chris W. Hill , Kevin J. Torek
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer is removed, creating an isolated lower electrode. The lower electrode can be covered with a capacitor dielectric and upper electrode to form a double-sided container capacitor.
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