发明授权
- 专利标题： Microelectronic devices and methods
- 专利标题（中）： 微电子器件及方法
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申请号： US10966202申请日： 2004-10-15
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公开(公告)号： US07329948B2公开(公告)日： 2008-02-12
- 发明人: Sri M. Sri-Jayantha , Gareth Hougham , Sung Kang , Lawrence Mok , Hien Dang , Arun Sharma
- 申请人： Sri M. Sri-Jayantha , Gareth Hougham , Sung Kang , Lawrence Mok , Hien Dang , Arun Sharma
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： F. Chau & Associates, LLC
- 主分类号： H01L23/10
- IPC分类号： H01L23/10 ; H01L23/34
摘要：
A microelectronic device is made of a semiconductor substrate, a heat generating component in a layer thereof, and a body within the remaining semiconductor substrate. The body is made of materials which have a high thermal inertia and/or thermal conductivity. When high thermal conductivity materials are used, the body acts to transfer the heat away from the substrate to a heat sink.
公开/授权文献
- US20060081979A1 Thermal properties for microelectronic devices 公开/授权日：2006-04-20
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