发明授权
- 专利标题: Semiconductor device inspection method
- 专利标题(中): 半导体器件检查方法
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申请号: US10082593申请日: 2002-02-22
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公开(公告)号: US07332359B2公开(公告)日: 2008-02-19
- 发明人: Akira Hamamatsu , Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama
- 申请人: Akira Hamamatsu , Minori Noguchi , Yoshimasa Ohshima , Hidetoshi Nishiyama
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Townsend and Townsend and Crew LLP
- 优先权: JP2001-222405 20010724
- 主分类号: H01L31/26
- IPC分类号: H01L31/26
摘要:
Techniques for inspecting semiconductor devices. An inspection condition using chip matrix data and chip size data is set. The intricate circuit patterns of at least one semiconductor device is inspected with the inspection condition. In an embodiment of the present invention, inspection uses images formed by the irradiation of white light, a laser light, or an electron beam. Data obtained from the inspection is used to generate a revised inspection condition. Semiconductor devices are inspected using the revised inspection condition.
公开/授权文献
- US20030022401A1 Semiconductor device inspection method 公开/授权日:2003-01-30
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