发明授权
- 专利标题： Control of strain in device layers by prevention of relaxation
- 专利标题（中）： 通过防止放松来控制器件层的应变
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申请号： US11227529申请日： 2005-09-15
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公开(公告)号： US07335545B2公开(公告)日： 2008-02-26
- 发明人: Matthew T. Currie
- 申请人： Matthew T. Currie
- 申请人地址： US NH Salem
- 专利权人： AmberWave Systems Corporation
- 当前专利权人： AmberWave Systems Corporation
- 当前专利权人地址： US NH Salem
- 代理机构： Goodwin Procter LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. Strain in the strained semiconductors is controlled for improved device performance.
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