发明授权
- 专利标题： Semiconductor memory device and method of production
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US11135002申请日： 2005-05-23
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公开(公告)号： US07335939B2公开(公告)日： 2008-02-26
- 发明人: Franz Hofmann , Johannes Luyken , Michael Specht
- 申请人： Franz Hofmann , Johannes Luyken , Michael Specht
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
An array of charge-trapping memory cells and pluralities of parallel wordlines and parallel bitlines running transversely to the wordlines are arranged on a substrate surface. Gate electrodes are located between the wordlines and bitlines and are, in their sequence along the direction of the wordlines, connected alternatingly to one of two adjacent wordlines.
公开/授权文献
- US20060261403A1 Semiconductor memory device and method of production 公开/授权日：2006-11-23
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