发明授权
- 专利标题: Capacitor structure
- 专利标题(中): 电容结构
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申请号: US10908639申请日: 2005-05-20
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公开(公告)号: US07339225B2公开(公告)日: 2008-03-04
- 发明人: Chih-Fu Chien , Chao-Chi Lee , Cheng-Chung Chou
- 申请人: Chih-Fu Chien , Chao-Chi Lee , Cheng-Chung Chou
- 申请人地址: TW Hsin-Chu
- 专利权人: Faraday Technology Corp.
- 当前专利权人: Faraday Technology Corp.
- 当前专利权人地址: TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要:
A capacitor structure is provided. The capacitor structure is configured in a substrate. The capacitor structure includes a plurality of electrode sets, at least a first conductive plug and at least a second conductive plug. The electrode sets correspond with each other and are disposed in different layers of the substrate. Each electrode set comprises a first electrode and a second electrode surrounding the former. In addition, the first conductive plug and the second conductive plug are disposed between two adjacent electrode sets. First electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the first conductive plug. Similarly, second electrodes of two adjacent electrode sets correspond with each other and are electrically connected to each other through the second conductive plug.
公开/授权文献
- US20060261394A1 CAPACITOR STRUCTURE 公开/授权日:2006-11-23