发明授权
US07339277B2 Semiconductor device having passive component and support substrate with electrodes and through electrodes passing through support substrate 有权
具有无源元件和支撑衬底的半导体器件具有电极和穿过支撑衬底的电极

Semiconductor device having passive component and support substrate with electrodes and through electrodes passing through support substrate
摘要:
A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.
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