发明授权
- 专利标题: Semiconductor device having passive component and support substrate with electrodes and through electrodes passing through support substrate
- 专利标题(中): 具有无源元件和支撑衬底的半导体器件具有电极和穿过支撑衬底的电极
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申请号: US11059469申请日: 2005-02-16
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公开(公告)号: US07339277B2公开(公告)日: 2008-03-04
- 发明人: Takeshi Shioga , Kazuaki Karasawa , Kazuaki Kurihara
- 申请人: Takeshi Shioga , Kazuaki Karasawa , Kazuaki Kurihara
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Staas & Halsey LLP
- 优先权: JP2001-18132 20010126; JP2001-100184 20010330
- 主分类号: H05K1/16
- IPC分类号: H05K1/16
摘要:
A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.
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