公开(公告)号：US07339277B2

公开(公告)日：2008-03-04

申请号：US11059469

申请日：2005-02-16

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H05K1/16

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域中，第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US06873038B2

公开(公告)日：2005-03-29

申请号：US10629761

申请日：2003-07-30

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L23/498 ,  H01L23/50 ,  H01L23/522 ,  H01L23/64 ,  H01L27/08 ,  H01L21/44

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域中，第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US06624501B2

公开(公告)日：2003-09-23

申请号：US09956944

申请日：2001-09-21

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L2900

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域内的第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US20050156279A1

公开(公告)日：2005-07-21

申请号：US11059469

申请日：2005-02-16

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L23/498 ,  H01L23/50 ,  H01L23/522 ,  H01L23/64 ,  H01L27/08 ,  H01L29/00 ,  H01L21/338

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域内的第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US20110168564A1

公开(公告)日：2011-07-14

申请号：US13043854

申请日：2011-03-09

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： C25D7/12

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10 as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 在树脂层10的表面没有形成过度的深孔，如通过去污处理，从而可以在树脂层10上形成光致抗蚀剂膜40的微粉化图案。因此，可以在 确保了高可靠性的窄间距树脂层10。

公开(公告)号：US07832069B2

公开(公告)日：2010-11-16

申请号：US11790732

申请日：2007-04-27

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01G7/00

CPC分类号： H01L27/0805 ,  H01L21/76877 ,  H01L24/11 ,  H01L28/40 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

摘要翻译： 电容器装置包括由形成在基板（10）上的下电极（12），电介质膜（14）和上电极（16）构成的电容器Q; 覆盖电容器Q的绝缘膜（18）; 形成在所述上电极（16）的连接部（16a）上的绝缘膜（18）中的第一接触孔（18a） 用于防止形成在第一接触孔（18a）中的焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸块（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），与第一接触孔 ）突出部（16a）。

公开(公告)号：US20100112775A1

公开(公告)日：2010-05-06

申请号：US12684570

申请日：2010-01-08

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。

公开(公告)号：US07670940B2

公开(公告)日：2010-03-02

申请号：US11250399

申请日：2005-10-17

申请人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

发明人： Masataka Mizukoshi ,  Kanae Nakagawa ,  Takeshi Shioga ,  Kazuaki Kurihara ,  John David Baniecki

IPC分类号： H01L21/76

CPC分类号： H01L24/91 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/76801 ,  H01L21/7687 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48132 ,  H01L2224/73267 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。

公开(公告)号：US20080315358A1

公开(公告)日：2008-12-25

申请号：US12222764

申请日：2008-08-15

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L29/00 ,  H01G4/06

CPC分类号： H01L28/55 ,  H01G4/33 ,  H01L24/73 ,  H01L27/0805 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924 ,  Y10S438/957 ,  Y10T29/435 ,  H01L2924/00012 ,  H01L2924/00

摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在下阻挡层（13）上依次形成下电极（14a），电容电介质层（15a）和上电极（16a）制成的电容器（Q1和Q2）; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。

公开(公告)号：US20080305607A1

公开(公告)日：2008-12-11

申请号：US12219577

申请日：2008-07-24

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L21/02197 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/31691 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55

摘要： A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

摘要翻译： 一种薄膜电容器，包括保持在顶部和底部电极之间的顶部电极，底部电极和电介质膜。 电介质膜至少由阳离子Ba，Sr，Ti和阴离子O组成。Sr，Ti和O离子的浓度沿着电介质膜的生长方向是均匀的，而Ba阳离子的浓度是不均匀的 沿着生长方向，使得其中钙钛矿型Ba阳离子（Ba-I）的平均浓度小于非钙钛矿型Ba阳离子（Ba-II）的平均浓度的还原Ba-I区域存在于或接近 比例R =（atm％Ba-I）/ [（atm％Ba-I）+（atm％Ba-II）]在顶部和底部电极中的至少一个之间的边界在0.1