- 专利标题: Method and apparatus for measuring electron density of plasma and plasma processing apparatus
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申请号: US10831757申请日: 2004-04-26
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公开(公告)号: US07339656B2公开(公告)日: 2008-03-04
- 发明人: Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
- 申请人: Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-119279 20030424; JP2003-123442 20030428; JP2004-009100 20040116; JP2004-117817 20040413
- 主分类号: G01N21/00
- IPC分类号: G01N21/00
摘要:
An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
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