Invention Grant
- Patent Title: Method and apparatus for measuring electron density of plasma and plasma processing apparatus
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Application No.: US10831757Application Date: 2004-04-26
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Publication No.: US07339656B2Publication Date: 2008-03-04
- Inventor: Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
- Applicant: Naoki Matsumoto , Yohei Yamazawa , Chishio Koshimizu , Tatsuo Matsudo , Sumie Segawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2003-119279 20030424; JP2003-123442 20030428; JP2004-009100 20040116; JP2004-117817 20040413
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.
Public/Granted literature
- US20050009347A1 Method and apparatus for measuring electron density of plasma and plasma processing apparatus Public/Granted day:2005-01-13
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