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US07342277B2 Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric 有权

Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
Abstract:
A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain electrodes. The transistor has a gate electrode and dielectric material containing one or more quantum dots between the carbon nanotube and the gate electrode.
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