发明授权
US07342293B2 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same
失效
具有第二浅沟槽隔离（STI）区域的双极结晶体管（BJTS）及其形成方法
- 专利标题： Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same
- 专利标题（中）： 具有第二浅沟槽隔离（STI）区域的双极结晶体管（BJTS）及其形成方法
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申请号： US11164757申请日： 2005-12-05
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公开(公告)号： US07342293B2公开(公告)日： 2008-03-11
- 发明人: Thomas A. Wallner , Thomas N. Adam , Stephen W. Bedell , Joel P. De Souza
- 申请人： Thomas A. Wallner , Thomas N. Adam , Stephen W. Bedell , Joel P. De Souza
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11 ; H01L29/00
摘要：
The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends between the first STI region and the collection region and undercuts a portion of the active base region with an undercut angle of not more than about 90°. For example, the second STI region may a substantially triangular cross-section with an undercut angle of less than about 90°, or a substantially rectangular cross-section with an undercut angle of about 90°. Such a second STI region can be fabricated using a porous surface section formed in an upper surface of the collector region.
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